Thayamathy, P and Elango, P and Koneswaran, M (2018) M-Polynomial and Degree Based Topological Indices for Silicon Oxide. International Research Journal of Pure and Applied Chemistry, 16 (4). pp. 1-9. ISSN 22313443
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Abstract
Silican oxide (SiO2) is the most abundant oxide present on the surface of the earth which has a wide spectrum of technological applications due to it's various chemical and physical properties. The topological index is a numerical representation of a molecular structure. The first topological index in chemical graph theory is the Winer index which is a distance-based topological index. The degree-based topological indices are the most studied type of topological indices which play a prominent role in chemical graph theory. In this paper, we derive the M-Polynomial for Silican oxide SiO2 layer structure and calculate some of the important degree based topological indices using this M-polynomial. We derive the M-Polynomial derivative formula for the ABC-index and calculate the ABC-index by using this derived formula.
Item Type: | Article |
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Subjects: | STM One > Chemical Science |
Depositing User: | Unnamed user with email support@stmone.org |
Date Deposited: | 20 Apr 2023 06:57 |
Last Modified: | 13 Aug 2025 04:05 |
URI: | http://note.send2pub.com/id/eprint/798 |