M-Polynomial and Degree Based Topological Indices for Silicon Oxide

Thayamathy, P and Elango, P and Koneswaran, M (2018) M-Polynomial and Degree Based Topological Indices for Silicon Oxide. International Research Journal of Pure and Applied Chemistry, 16 (4). pp. 1-9. ISSN 22313443

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Abstract

Silican oxide (SiO2) is the most abundant oxide present on the surface of the earth which has a wide spectrum of technological applications due to it's various chemical and physical properties. The topological index is a numerical representation of a molecular structure. The first topological index in chemical graph theory is the Winer index which is a distance-based topological index. The degree-based topological indices are the most studied type of topological indices which play a prominent role in chemical graph theory. In this paper, we derive the M-Polynomial for Silican oxide SiO2 layer structure and calculate some of the important degree based topological indices using this M-polynomial. We derive the M-Polynomial derivative formula for the ABC-index and calculate the ABC-index by using this derived formula.

Item Type: Article
Subjects: STM One > Chemical Science
Depositing User: Unnamed user with email support@stmone.org
Date Deposited: 20 Apr 2023 06:57
Last Modified: 13 Aug 2025 04:05
URI: http://note.send2pub.com/id/eprint/798

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